Morphology, microstructure, and doping behaviour: A comparison between different deposition methods for poly?Si/SiO <sub> <i>x</i> </sub> passivating contacts
نویسندگان
چکیده
Crystallographic structures, optoelectronic properties, and nanoscale surface morphologies of ex situ phosphorus-doped polycrystalline silicon (poly-Si)/SiOx passivating contacts, formed by different deposition methods (sputtering, plasma-enhanced chemical vapour [PECVD], low-pressure [LPCVD]), are investigated compared. Across all these technologies, we noted the same trend: higher diffusion temperatures yield films that more crystalline but have rougher due to bigger crystal grains. Also, recrystallization process as-deposited Si starts from SiOx interface, rather than film bulk. However, there some distinct differences among technologies. First, LPCVD method yields lowest rate, roughest surfaces, smallest degree crystallinity on finished poly-Si films. In contrast, PECVD has highest rate smoothest surfaces for both annealed Second, sputtered contain only an amorphous phase, whereas already phase. Third, phosphorus in-diffusion into substrate depends strongly initial thickness, other two methods, it is weakly dependent thickness. Finally, passivation quality every type responses thickness temperature, suggesting doping optimization should be performed independently.
منابع مشابه
A comparison of sub-word indexing methods for information retrieval
This paper compares different methods of subword indexing and their performance on the English and German domain-specific document collection of the Cross-language Evaluation Forum (CLEF). Four major methods to index sub-words are investigated and compared to indexing stems: 1) sequences of vowels and consonants, 2) a dictionary-based approach for decompounding, 3) overlapping character n-grams...
متن کاملeffect of sub-grid scales on large eddy simulation of particle deposition in a turbulent channel flow
چکیده ندارد.
15 صفحه اولAtmospheric Oxygen Binding and Hole Doping in Deformed Graphene on a SiO<sub>2</sub> Substrate
Using micro-Raman spectroscopy and scanning tunneling microscopy, we study the relationship between structural distortion and electrical hole doping of graphene on a silicon dioxide substrate. The observed upshift of the Raman G band represents charge doping and not compressive strain. Two independent factors control the doping: (1) the degree of graphene coupling to the substrate and (2) expos...
متن کاملA Comparison Between Sub-threshold and Adiabatic Power Saving Techniques
This paper analyzes the difference between two techniques of power saving circuit design. As the number of transistors increases power consumption and the need for more power efficient products increases there is greater motivation to design circuits to fulfill these expectations. We will give a comparison between these two technologies using an adder as the basic circuit. We will compare the p...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Progress in Photovoltaics
سال: 2021
ISSN: ['1062-7995', '1099-159X']
DOI: https://doi.org/10.1002/pip.3411